| PART |
Description |
Maker |
| AM29F400AB AM29F400AB-120EC AM29F400AB-120ECB AM29 |
4 Megabit (524288 x 8-Bit/262144 x 16-Bit) CMOS 5.0 Volt-only Sector Erase Flash Memory
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
|
AMD[Advanced Micro Devices]
|
| AM29F400AB-65EC AM29F400AB-65EI AM29F400AB-65FC AM |
Dual Retriggerable Monostable Multivibrators 16-SO -40 to 85 512K X 8 FLASH 5V PROM, 60 ns, PDSO48
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PDSO48
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 4兆位24,288 x 8-Bit/26244 x 16位）.0伏的CMOS只，扇区擦除闪存
4 Megabit (524/288 x 8-Bit/262/144 x 16-Bit) CMOS 5.0 Volt-only/ Sector Erase Flash Memory
Dual Retriggerable Monostable Multivibrators 16-TVSOP -40 to 85
Dual Retriggerable Monostable Multivibrators 16-SOIC -40 to 85
4 Megabit (524,288x8-bit/262, 144x16 bit) CMOS 5.0Volt-only, sector erase flash memory
|
AMD
Advanced Micro Devices, Inc.
|
| V29C51002B-55J V29C51002T-55T V29C51002B-55T V29C5 |
2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY 2兆位262,144 × 85伏的CMOS闪存
2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY 2兆位262,144 × 8伏的CMOS闪存
|
Mosel Vitelic, Corp.
|
| V29LC51002 |
2 MEGABIT 262/144 x 8 BIT 5 VOLT CMOS FLASH MEMORY
2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY
|
Mosel Vitelic Corp
Mosel Vitelic, Corp
Mosel Vitelic Corp
|
| AM29F400AB-70FI AM29F400AB-70SC AM29F400AT-70SC AM |
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 70 ns, PDSO48
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 70 ns, PDSO44
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDSO44
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDSO48
|
Advanced Micro Devices, Inc.
|
| AM75DL9608HGT70IT AM75DL9608HGT75IS AM75DL9608HGT7 |
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 64兆位个M x 16位）2兆位米16位）.0伏的CMOS只，同时作业闪存，和
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and SPECIALTY MEMORY CIRCUIT, PBGA73
|
Spansion Inc.
Xilinx, Inc.
Spansion, Inc.
|
| M5M44170-10S M5M44170-7S |
FAST PAGE MODE 4,194,304-BIT (262,144-WORD BY 16-BIT) DYNAMIC RAM 快速页面模,194,304位（262,144字由16位）动态随机存储器
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| MSM54V16272 |
262,144-Word x 16-Bit Multiport DRAM 262,144字16位多端口内存
|
OKI SEMICONDUCTOR CO., LTD.
|
| MSM54V16255A |
262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 262,144字16位动态随机存储器：快速页面模式型
|
OKI SEMICONDUCTOR CO., LTD.
|
| AM75DL9608HGT75IT AM75DL9608HG AM75DL9608HGB70IS A |
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and
|
SPANSION[SPANSION]
|
| AM29F400BT-50FC AM29F400BT-50FI AM29F400BB-50EE AM |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRF2805 with Lead Free Packaging
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL3215 with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL520N with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRL3705ZS with Standard Packaging
200V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7492 with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFZ46ZS with Standard Packaging
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFB4215 with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package; A IRFPS3810 with Standard Packaging
80V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU2908 with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF1310NL with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a SOT-223 package; A IRLL2703 with Standard Packaging
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFZ34VL with Standard Packaging
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; A IRFIZ24E with Standard Packaging
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package. Recommended replacement is IRF6621; A IRF6604 with Standard Tape and Reel Quantity
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRLZ34NS with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7452 with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL3803V with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFZ48NS with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF3710ZL with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; Similar to IRLI2203N with Lead Free Packaging
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRL3714ZL with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFZ48ZL with Standard Packaging
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRL3714S with Lead Free Packaging
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRL3714S with Standard Packaging
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 5V PROM, 55 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 5V PROM, 55 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
x8/x16 Flash EEPROM x8/x16闪存EEPROM
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
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